Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure.

The regularities of the formation of thin Mn/Si (111) nanofilms during solid-phase deposition of Mn on Si under conditions of ultrahigh vacuum (P = 1 0 − 7 Pa) and thin Mn₄Si₇/Si (111) nanofilms during annealing of the Mn/Si system have been studied. It has been established that silicon atoms diffuse into the Mn film up to a thickness of Θ = 1 0 –12 monolayers, and Mn in Si up to Θ = 8 –10 monolayers, therefore, a transition layer of nonstoichiometric Mn_xSi_y silicide is formed at the Mn–Si interface. After heating at T = 1 0 5 0 K, the higher manganese silicide (HMS) Mn₄Si₇ is formed. In particular, it was found that the bandgap of Mn₄Si₇is E g ≈ 0. 7 2 eV, and the electron affinity is χ ≈ 3 eV and in the work, the optimal thermal diffusion conditions for the formation of stoichiometric Mn₄Si₇ silicide are determined. It is shown that at T ≤ 1 0 0 0 K, a partial formation of a chemical bond between manganese and silicon atoms occurs. At 1100 K, a thin Mn₄Si₇ film with a good stoichiometric composition is formed. [ABSTRACT FROM AUTHOR]