New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors.

MLA

Chakraborty, Surajit, et al. “New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors.” Electronics (2079-9292), vol. 12, no. 14, July 2023, p. 3044. EBSCOhost, https://doi.org/10.3390/electronics12143044.

APA

Chakraborty, S., Amir, W., Kwon, H.-M., & Kim, T.-W. (2023). New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors. Electronics (2079-9292), 12(14), 3044. https://doi.org/10.3390/electronics12143044

Chicago

Chakraborty, Surajit, Walid Amir, Hyuk-Min Kwon, and Tae-Woo Kim. 2023. “New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors.” Electronics (2079-9292) 12 (14): 3044. doi:10.3390/electronics12143044.