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No‐Heating Deposition of Ferroelectric x%YO1.5–(100−x%)(Hf1−yZry)O2 Films.

Authors :
Mimura, Takanori
Shimura, Reijiro
Tateyama, Akinori
Nakamura, Yoshiko
Shiraishi, Takahisa
Funakubo, Hiroshi
Source :
Physica Status Solidi. A: Applications & Materials Science; Jul2023, Vol. 220 Issue 14, p1-6, 6p
Publication Year :
2023

Abstract

The no‐heating deposition of x%YO1.5–(100−x%)(Hf1−yZry)O2 (x = 0−0.09, y = 0, 0.25, 0.50, and 1) is achieved using a radio‐frequency magnetron sputtering method. To investigate the crystal structure and ferroelectric properties, epitaxial films are grown on (111)‐oriented indium tin oxide (ITO)/(111) Y‐stabilized zirconia (YSZ) substrates. The ferroelectric orthorhombic phase is obtained for the 5–7%YO1.5–95–93%HfO2 and 5%YO1.5–95% (Hf0.75Zr0.25)O2 films. The field‐induced phase transition from tetragonal to orthorhombic is confirmed for the 8%YO1.5–92%HfO2 and 5%YO1.5–95%(Hf0.50Zr0.50)O2 films. The remnant polarization (Pr) and coercive field (Ec) are 12–19 μC cm−2 and 2,000–2,500 kV cm−1, respectively. The piezoelectric response of 1 μm thick films is investigated for 6%YO1.5–94% HfO2, 7%YO1.5–93%HfO2, and 5%YO1.5–95%(Hf0.50Zr0.50)O2 films, which have piezoelectric coefficients (d33) of 1.0, 3.3, and 5.0 pm V−1, respectively. These results show no‐heating deposition of x%YO1.5–(100−x%)(Hf1−yZry)O2 films with ferroelectric and piezoelectric properties. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
18626300
Volume :
220
Issue :
14
Database :
Complementary Index
Journal :
Physica Status Solidi. A: Applications & Materials Science
Publication Type :
Academic Journal
Accession number :
166735281
Full Text :
https://doi.org/10.1002/pssa.202300100