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Temperature characterization of Raman scattering in an AlGaN/GaN heterostructure.
- Source :
- Applied Physics A: Materials Science & Processing; May2005, Vol. 80 Issue 8, p1729-1731, 3p
- Publication Year :
- 2005
-
Abstract
- Raman scattering from an AlGaN/GaN heterostructure was performed in the temperature range from 77 to 773 K. The first- and second-order Raman scattering of the A<subscript>1</subscript> longitudinal-optical phonon-plasmon coupled mode from an AlGaN/GaN interface as well as the Raman scattering from the GaN layer were observed. All the modes downshift, and their intensities weaken with increasing temperature. The free-carrier concentration estimated by the frequency of the coupled mode from an AlGaN/GaN interface is 7.5 times as high as that of n-AlGaN, indicating mass free-carrier transfer from the AlGaN barrier to the GaN well. Moreover, the temperature dependence of the phonon frequency is well described by an empirical formula. [ABSTRACT FROM AUTHOR]
- Subjects :
- HETEROSTRUCTURES
RAMAN effect
GALLIUM nitride
PHONONS
PLASMONS (Physics)
Subjects
Details
- Language :
- English
- ISSN :
- 09478396
- Volume :
- 80
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Applied Physics A: Materials Science & Processing
- Publication Type :
- Academic Journal
- Accession number :
- 16600424
- Full Text :
- https://doi.org/10.1007/s00339-003-2456-2