Optimization of Ternary In x Ga 1-x N Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs.

Red, green, and blue light In_xGa_1−xN multiple quantum wells have been grown on GaN/γ-LiAlO₂ microdisk substrates by plasma-assisted molecular beam epitaxy. We established a mechanism to optimize the self-assembly growth with ball-stick model for In_xGa_1-xN multiple quantum well microdisks by bottom-up nanotechnology. We showed that three different red, green, and blue lighting micro-LEDs can be made of one single material (In_xGa_1-xN) solely by tuning the indium content. We also demonstrated that one can fabricate a beautiful In_xGa_1-xN-QW microdisk by choosing an appropriate buffer layer for optoelectronic applications. [ABSTRACT FROM AUTHOR]