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Type‐II Dirac Nodal Lines in a Double‐Kagome‐Layered Semimetal.

Authors :
Cai, Yongqing
Wang, Jianfeng
Wang, Yuan
Hao, Zhanyang
Liu, Yixuan
Zhou, Liang
Sui, Xuelei
Jiang, Zhicheng
Xu, Shengjie
Ge, Han
Ma, Xiao‐Ming
Zhang, Chengcheng
Shen, Zecheng
Yang, Yichen
Jiang, Qi
Liu, Zhengtai
Ye, Mao
Shen, Dawei
Liu, Yi
Cui, Shengtao
Source :
Advanced Electronic Materials; Jul2023, Vol. 9 Issue 7, p1-8, 8p
Publication Year :
2023

Abstract

Lorentz‐violating type‐II Dirac nodal line semimetals (DNLSs), hosting curves of band degeneracy formed by two dispersion branches with the same sign of slope, represent a novel state of matter. While being studied extensively in theory, convincing experimental evidence of type‐II DNLSs remain elusive. Recently, vanadium‐based kagome materials have emerged as a fertile ground to study the interplay between lattice symmetry and band topology. This work studies the low‐energy band structure of double‐kagome‐layered CsV8Sb12 and identifies it as a scarce type‐II DNLS protected by mirror symmetry. This work observes multiple DNLs consisting of type‐II Dirac cones close to or almost at the Fermi level via angle‐resolved photoemission spectroscopy (ARPES), which provides an electronic explanation for the nonsaturating magnetoresistance effect as observed. First‐principles theory analyses show that spin‐orbit coupling only opens a small gap, resulting in effectively gapless ARPES spectra, yet generating large spin Berry curvature. These type‐II DNLs, together with the interaction between a low‐energy van Hove singularity and quasi‐one‐dimensional band as observed in the same material, suggest CsV8Sb12 as an ideal platform for exploring novel transport properties. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
2199160X
Volume :
9
Issue :
7
Database :
Complementary Index
Journal :
Advanced Electronic Materials
Publication Type :
Academic Journal
Accession number :
164878095
Full Text :
https://doi.org/10.1002/aelm.202300212