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Tailoring SnO 2 Defect States and Structure: Reviewing Bottom-Up Approaches to Control Size, Morphology, Electronic and Electrochemical Properties for Application in Batteries.
- Source :
- Materials (1996-1944); Jun2023, Vol. 16 Issue 12, p4339, 29p
- Publication Year :
- 2023
-
Abstract
- Tin oxide (SnO<subscript>2</subscript>) is a versatile n-type semiconductor with a wide bandgap of 3.6 eV that varies as a function of its polymorph, i.e., rutile, cubic or orthorhombic. In this review, we survey the crystal and electronic structures, bandgap and defect states of SnO<subscript>2</subscript>. Subsequently, the significance of the defect states on the optical properties of SnO<subscript>2</subscript> is overviewed. Furthermore, we examine the influence of growth methods on the morphology and phase stabilization of SnO<subscript>2</subscript> for both thin-film deposition and nanoparticle synthesis. In general, thin-film growth techniques allow the stabilization of high-pressure SnO<subscript>2</subscript> phases via substrate-induced strain or doping. On the other hand, sol–gel synthesis allows precipitating rutile-SnO<subscript>2</subscript> nanostructures with high specific surfaces. These nanostructures display interesting electrochemical properties that are systematically examined in terms of their applicability to Li-ion battery anodes. Finally, the outlook provides the perspectives of SnO<subscript>2</subscript> as a candidate material for Li-ion batteries, while addressing its sustainability. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 19961944
- Volume :
- 16
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- Materials (1996-1944)
- Publication Type :
- Academic Journal
- Accession number :
- 164686744
- Full Text :
- https://doi.org/10.3390/ma16124339