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Homoepitaxial growth of (100) Si-doped β -Ga2O3 films via MOCVD.
- Source :
- Journal of Semiconductors; Jun2023, Vol. 44 Issue 6, p1-7, 7p
- Publication Year :
- 2023
Details
- Language :
- English
- ISSN :
- 16744926
- Volume :
- 44
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Journal of Semiconductors
- Publication Type :
- Academic Journal
- Accession number :
- 164365111
- Full Text :
- https://doi.org/10.1088/1674-4926/44/6/062801