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Ti3C2Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors.
- Source :
- Advanced Materials; Jun2023, Vol. 35 Issue 22, p1-10, 10p
- Publication Year :
- 2023
Details
- Language :
- English
- ISSN :
- 09359648
- Volume :
- 35
- Issue :
- 22
- Database :
- Complementary Index
- Journal :
- Advanced Materials
- Publication Type :
- Academic Journal
- Accession number :
- 164066319
- Full Text :
- https://doi.org/10.1002/adma.202211738