Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES).

Electron emission spectroscopy was performed on metalorganic chemical vapor deposition grown p-n⁻-n⁺ junctions with p-thicknesses ranging from 50 to 300 nm, doped with [Mg] = 3.5 × 10¹⁹ cm⁻³. By measuring the decreasing emitted electron intensity from a cesiated p-GaN surface with increasing p-thickness, we were able to extract the minority carrier diffusion length of electron in p-type GaN, L_e = 26 ± 3 nm. The measured value is in good agreement with literature reported values. The extrapolated electron current at the n⁻ region–p-GaN interface is in reasonable agreement with the simulated electron current at the interface. [ABSTRACT FROM AUTHOR]