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Memristive computing in Germany.
- Source :
- IT: Information Technology; May2023, Vol. 65 Issue 1/2, p1-2, 2p
- Publication Year :
- 2023
-
Abstract
- Such behaviour is to observe in non-volatile memory (NVM) elements, e.g., in resistive RAMs (ReRAMs), spin-torque transfer (STT)-MRAMs, phase change memory (PCM)-RAMs or polarization-based ferroelectric RAMs (FeRAM). It was in 1971 when Leon Chua concluded by a plausibility consideration based on symmetry that there should exist a fourth fundamental element in electronics in addition to resistance, capacitance and inductance. These properties include, e.g., a pinched hysteresis curve of the current/voltage waveform, i.e., the curve passes through the point of origin in contrast to a usual hysteresis curve (according to a paper title from Leon Chua "if it's pinched, it's a memristor"). [Extracted from the article]
Details
- Language :
- English
- ISSN :
- 16112776
- Volume :
- 65
- Issue :
- 1/2
- Database :
- Complementary Index
- Journal :
- IT: Information Technology
- Publication Type :
- Academic Journal
- Accession number :
- 163820740
- Full Text :
- https://doi.org/10.1515/itit-2023-0017