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Effect of sintering temperature on structural, electrical, and ferroelectric properties of neodymium and sodium co-doped barium titanate ceramics.
- Source :
- Journal of Materials Science: Materials in Electronics; May2023, Vol. 34 Issue 14, p1-14, 14p
- Publication Year :
- 2023
-
Abstract
- The effects of sintering temperature on the structural, dielectric, and ferroelectric properties of lead-free Ba<subscript>0.96</subscript>Nd<subscript>0.02</subscript>Na<subscript>0.02</subscript>TiO<subscript>3</subscript> ceramics fabricated via a conventional solid-state reaction process are discussed in this paper. Sintered temperatures for the ceramics were 1200 °C, 1250 °C, 1300 °C, and 1350 °C. All samples comprise a single-phase tetragonal structure, according to XRD, Rietveld refinement, and Raman spectra. The density of electrons Equivalence maps was visible on Fourier maps. As the sintering temperature increases from 1200 to 1300 °C, the grain size increases from 4.64 to 9.84 µm. The correlation between structural, morphological, dielectric, and ferroelectric properties is detailed. The temperature dependency of the dielectric constant has been studied at three different frequencies in temperatures ranging from 30 to 200 °C. At 1300 °C, the Ba<subscript>0.96</subscript>Nd<subscript>0.02</subscript>Na<subscript>0.02</subscript>TiO<subscript>3</subscript> ceramic achieves an optimum dielectric constant of 1054 and a dielectric loss of 0.012. Furthermore, at 1300 °C, this sintered material performs excellent ferroelectric remnant polarization of 8.05 µC.cm<superscript>−2</superscript> and a coercive field of 20.87 kV.cm<superscript>−1</superscript>. Interestingly, the loss tangent at different frequencies for 1300 °C sintered samples was less than 0.1 over the entire temperature range, indicating that this sample is suitable for Multilayer Ceramic Capacitors (MLCCs) used in high-temperature applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09574522
- Volume :
- 34
- Issue :
- 14
- Database :
- Complementary Index
- Journal :
- Journal of Materials Science: Materials in Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 163728804
- Full Text :
- https://doi.org/10.1007/s10854-023-10576-7