Inelastic electron tunneling spectroscopy and bias voltage dependence of magnetic tunnel junctions with polycrystalline Co2MnSi electrode.

Spintronics needs half-metallic materials implemented in technologically relevant devices. We prepare Co₂MnSi/AlO_x/Co₇Fe₃ junctions showing a tunneling magnetoresistance of 94.6% at 1 mV and 20 K. Their inelastic electron tunneling spectra at 20 K show typical magnon and phonon excitations in the electrode and the barrier and an additional shoulder around -22 mV not observed in Co₇Fe₃/AlO_x/Ni₈₁Fe₁₉ reference junctions. Furthermore, the bias voltage and temperature dependence of the tunneling magnetoresistance is considerably larger than for the reference junctions. The transport properties are discussed with respect to a variety of current contributions associated with the structural and magnetic properties of the Co₂MnSi/AlO_x interface. [ABSTRACT FROM AUTHOR]