Cite
Doped HfO2-based ferroelectric-aided charge-trapping effect in MFIS gate stack of FeFET.
MLA
Zhang, Bao, et al. “Doped HfO2-Based Ferroelectric-Aided Charge-Trapping Effect in MFIS Gate Stack of FeFET.” Journal of Applied Physics, vol. 133, no. 16, Apr. 2023, pp. 1–8. EBSCOhost, https://doi.org/10.1063/5.0141082.
APA
Zhang, B., Hong, P., Hou, J., Huo, Z., & Ye, T. (2023). Doped HfO2-based ferroelectric-aided charge-trapping effect in MFIS gate stack of FeFET. Journal of Applied Physics, 133(16), 1–8. https://doi.org/10.1063/5.0141082
Chicago
Zhang, Bao, Peizhen Hong, Jingwen Hou, Zongliang Huo, and Tianchun Ye. 2023. “Doped HfO2-Based Ferroelectric-Aided Charge-Trapping Effect in MFIS Gate Stack of FeFET.” Journal of Applied Physics 133 (16): 1–8. doi:10.1063/5.0141082.