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Correlative HAADF-STEM and EDX-STEM Tomography for the 3D Morphological and Elemental Analysis of FinFET Semiconductor Devices.
- Source :
- Microscopy & Microanalysis; Aug2019 Supplement, p388-389, 2p
- Publication Year :
- 2019
Details
- Language :
- English
- ISSN :
- 14319276
- Database :
- Complementary Index
- Journal :
- Microscopy & Microanalysis
- Publication Type :
- Academic Journal
- Accession number :
- 163212278
- Full Text :
- https://doi.org/10.1017/S143192761800243X