Back to Search Start Over

High-temperature solid-phase synthesis of eulyite-type Ba3Yb(PO4)3 as a single host for narrow-band Tb3+ green emission.

Authors :
Zhao, Jiaqi
Hu, Chen
Fang, Jiapeng
Sun, Ruyi
Lu, Jingyao
Su, Shikun
Lei, Zonghao
Fang, Pengfei
Feng, He
Degao, Zhong
Teng, Bing
Source :
Journal of Materials Science: Materials in Electronics; Apr2023, Vol. 34 Issue 10, p1-12, 12p
Publication Year :
2023

Abstract

In this work, a series of iso-structural eulyite-type Ba<subscript>3</subscript>Yb(PO<subscript>4</subscript>)<subscript>3</subscript>:Tb<superscript>3+</superscript> solid solution phosphors were synthesized via high-temperature solid-phase method. The corresponding unit cell structure, luminescence properties, thermal stability, and chromaticity coordinates of the as-obtained phosphors were systematically investigated. The crystal structure of Ba<subscript>3</subscript>Yb(PO<subscript>4</subscript>)<subscript>3</subscript>:Tb<superscript>3+</superscript> was refined by GSAS program, which indicates the oxygen ions in Ba<subscript>3</subscript>Yb(PO<subscript>4</subscript>)<subscript>3</subscript> are disordered at one C3 site, and the oxygen atoms are distributed at two sites. Under 378 nm ultraviolet excitation, the emission peak of Ba<subscript>3</subscript>Yb(PO<subscript>4</subscript>)<subscript>3</subscript>:Tb<superscript>3+</superscript> appears in the range of 450–650 nm, and a characteristic green emission peak appears at 542 nm. Moreover, the luminous intensity of the Ba<subscript>3</subscript>Yb(PO<subscript>4</subscript>)<subscript>3</subscript>:14 at.% Tb<superscript>3+</superscript> sample at 160 °C is 87.7% at room temperature, and the quantum yield is 55.8%, which reveals good thermal stability. Our results suggest that the Ba<subscript>3</subscript>Yb(PO<subscript>4</subscript>)<subscript>3</subscript>:Tb<superscript>3+</superscript> phosphors are promising high-efficiency green light conversion materials for UV-LED applications. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574522
Volume :
34
Issue :
10
Database :
Complementary Index
Journal :
Journal of Materials Science: Materials in Electronics
Publication Type :
Academic Journal
Accession number :
163129346
Full Text :
https://doi.org/10.1007/s10854-023-10353-6