Si0.5Ge0.5 Channel FinFET Preparation on an In Situ Doped SiGe SRB and Its Electrical Characteristics Optimization.

Details

Language :

English

ISSN :

21628769

Volume :

12

Issue :

3

Database :

Complementary Index

Journal :

ECS Journal of Solid State Science & Technology

Publication Type :

Academic Journal

Accession number :

162988826

Full Text :

https://doi.org/10.1149/2162-8777/acc359