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The origin of the band-splitting and the spin polarization in bulk 2H-WSe2.

Authors :
Zhang, Yilin
Zhao, Yafei
Tu, Jian
Deng, Yafeng
Yan, Pengfei
Dai, Xingze
Ruan, Xuezhong
Li, Yao
Liu, Wenqing
Xu, Yongbing
He, Liang
Source :
Applied Physics Letters; 4/3/2023, Vol. 122 Issue 14, p1-6, 6p
Publication Year :
2023

Abstract

Recently, band-splitting associated with spin polarization at K- and K′-points of the Brillouin zone has been found in centrosymmetric transition metal dichalcogenide materials. This discovery offers a possibility on centrosymmetric crystals for potential valleytronic applications. However, the origin of the band-splitting and the spin polarization in multilayer and bulk transition metal dichalcogenides remains unclear as the interlayer coupling should play a role when compared with that in monolayers. Here, by performing spin- and angle-resolved photoemission spectroscopy in bulk 2H-WSe<subscript>2</subscript> at variable temperatures, we have quantitatively established contributions of the intralayer spin–orbit coupling and interlayer coupling. While the strength of the intralayer spin–orbit coupling is determined to be 450 meV, independent of the temperature, the strength of the interlayer coupling is found to increase from 68 to 172 meV as the temperature decreases from 300 to 80 K. This is also accompanied by an increase in the total band-splitting and a decrease in the spin polarization. This work reveals the micro-mechanism of spin and interlayer interaction in centrosymmetric materials, which provides a basis for the development of next-generation energy-efficient valleytronic devices. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
122
Issue :
14
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
162982440
Full Text :
https://doi.org/10.1063/5.0146774