Cite
Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si x N y.
MLA
Damilano, B., et al. “Nanoporous GaN by Selective Area Sublimation through an Epitaxial Nanomask: AlN versus Si x N Y.” Nanotechnology, vol. 34, no. 24, June 2023, pp. 1–8. EBSCOhost, https://doi.org/10.1088/1361-6528/acc3a2.
APA
Damilano, B., Vézian, S., Brault, J., Ruterana, P., Gil, B., & Tchernycheva, M. (2023). Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si x N y. Nanotechnology, 34(24), 1–8. https://doi.org/10.1088/1361-6528/acc3a2
Chicago
Damilano, B, S Vézian, J Brault, P Ruterana, B Gil, and M Tchernycheva. 2023. “Nanoporous GaN by Selective Area Sublimation through an Epitaxial Nanomask: AlN versus Si x N Y.” Nanotechnology 34 (24): 1–8. doi:10.1088/1361-6528/acc3a2.