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AlGalnN/InGaN应变补偿DBR结构设计.

Authors :
张君华
贾志刚
董海亮
臧茂荣
梁 建
许并社
Source :
Journal of Synthetic Crystals; Mar2023, Vol. 52 Issue 3, p452-459, 8p
Publication Year :
2023

Abstract

<i>Copyright of Journal of Synthetic Crystals is the property of Journal of Synthetic Crystals Editorial Office and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)

Details

Language :
Chinese
ISSN :
1000985X
Volume :
52
Issue :
3
Database :
Complementary Index
Journal :
Journal of Synthetic Crystals
Publication Type :
Academic Journal
Accession number :
162882975