Current Boosting of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors under Driving Conditions.

MLA

Park, Jingyu, et al. “Current Boosting of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors under Driving Conditions.” Advanced Electronic Materials, vol. 9, no. 3, Mar. 2023, pp. 1–10. EBSCOhost, https://doi.org/10.1002/aelm.202201109.

APA

Park, J., Choi, S., Kim, C., Shin, H. J., Jeong, Y. S., Bae, J. U., Oh, C. H., Oh, S., & Kim, D. H. (2023). Current Boosting of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors under Driving Conditions. Advanced Electronic Materials, 9(3), 1–10. https://doi.org/10.1002/aelm.202201109

Chicago

Park, Jingyu, Sungju Choi, Changwook Kim, Hong Jae Shin, Yun Sik Jeong, Jong Uk Bae, Chang Ho Oh, Saeroonter Oh, and Dae Hwan Kim. 2023. “Current Boosting of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors under Driving Conditions.” Advanced Electronic Materials 9 (3): 1–10. doi:10.1002/aelm.202201109.