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Memristive Synapse Based on Single‐Crystalline LiNbO3 Thin Film with Bioinspired Microstructure for Experience‐Based Dynamic Image Mask Generation.

Authors :
Wang, Jiejun
Pan, Xinqiang
Luo, Wenbo
Shuai, Yao
Xie, Qin
Xu, Jiaqi
Song, Zeqian
Wu, Chuangui
Zhang, Wanli
Source :
Advanced Electronic Materials; Mar2023, Vol. 9 Issue 3, p1-10, 10p
Publication Year :
2023

Abstract

One of the key steps toward constructing neuromorphic systems is to develop reliable bio‐realistic synaptic devices. Here, memristors based on single‐crystalline LiNbO3 (SC‐LNO) thin film are fabricated as artificial synapses. A reservoir of oxygen vacancies is induced by Ar+ irradiation to resemble synaptic vesicles containing neurotransmitters. Phenomena of saturation and adaptivity, short‐term plasticity, paired‐pulse facilitation, paired‐pulse depression, and long‐term potentiation are successfully mimicked. The dynamic transition from sensory memory to short‐term memory, and further to long‐term memory, is also successfully emulated for multipattern memorization. In addition, first, taking advantage of short‐ and long‐term synaptic plasticity is proposed, to realize experience‐based image mask generation with different stimuli schemes. During the experience‐based generation process, memristive multi‐value masks (MMVMs) are generated with different numbers of stimuli applied to the memristor at each pixel, which corresponds to the times the region occurred in the history image set. The experience‐based memristive multi‐value mask successfully extracts multiple regions of interest with different priorities. This work demonstrates that the memristor based on Ar+‐irradiated SC‐LNO thin film with bioinspired microstructure shows great potential in future neuromorphic systems for experience‐based intelligent image processing. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
2199160X
Volume :
9
Issue :
3
Database :
Complementary Index
Journal :
Advanced Electronic Materials
Publication Type :
Academic Journal
Accession number :
162402311
Full Text :
https://doi.org/10.1002/aelm.202201064