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Homogeneous in-plane WSe2 P–N junctions for advanced optoelectronic devices.
- Source :
- Nanoscale; 3/14/2023, Vol. 15 Issue 10, p4940-4950, 11p
- Publication Year :
- 2023
Details
- Language :
- English
- ISSN :
- 20403364
- Volume :
- 15
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- Nanoscale
- Publication Type :
- Academic Journal
- Accession number :
- 162321479
- Full Text :
- https://doi.org/10.1039/d2nr06263a