Back to Search Start Over

Abnormal topological domains in a high-density array of ferroelectric nanodots.

Authors :
Li, Zhongwen
Bo, Rui
Shen, Hui
Lin, Yi
Song, Guang
Wang, Yanzong
Li, Guannan
Nan, Feng
Wang, Chao
Wu, Yangjiang
Zhang, Zhengzhong
Liu, Hao
Source :
Journal of Applied Physics; 3/7/2023, Vol. 133 Issue 9, p1-8, 8p
Publication Year :
2023

Abstract

Utilizing vector PFM (piezoresponse force microscopy) on high-density nanodot arrays, ferroelectric nanodots and domain structure in nanodot arrays were investigated in the current study. Accordingly, we identified four types of topological domain states based on the measurements of spontaneous polarization vectors vs writing results in nanodots. In addition to convergent and divergent domains with upward and downward polarization, double-center domains and triple-center domains were also identified. In addition, center domains could be reversibly switched under the electric field produced by the biased PFM tip, and their stability could be maintained by compensating the polarization charge with the accumulated charge. These stable topological domain states in discrete nanodots present an opportunity to further investigate their new properties in high-density memory devices. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
133
Issue :
9
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
162291315
Full Text :
https://doi.org/10.1063/5.0119239