Cite
Selective Area Epitaxy of Complex Oxide Heterostructures on Si by Oxide Hard Mask Lift-Off.
MLA
Ning, Ruiguang, et al. “Selective Area Epitaxy of Complex Oxide Heterostructures on Si by Oxide Hard Mask Lift-Off.” Electronic Materials Letters, vol. 19, no. 2, Mar. 2023, pp. 192–99. EBSCOhost, https://doi.org/10.1007/s13391-022-00386-0.
APA
Ning, R., Jung, S. Y., Choi, H., Lee, B., Kim, M.-S., Choi, H.-J., Lee, J. Y., Park, J. S., Jung, S.-J., Jang, H. W., Won, S. O., Chang, H. J., Jang, J.-S., Lee, K. H., Lee, B. C., & Baek, S.-H. (2023). Selective Area Epitaxy of Complex Oxide Heterostructures on Si by Oxide Hard Mask Lift-Off. Electronic Materials Letters, 19(2), 192–199. https://doi.org/10.1007/s13391-022-00386-0
Chicago
Ning, Ruiguang, Soo Young Jung, Haneul Choi, Byeong-hyeon Lee, Min-Seok Kim, Hyung-Jin Choi, Jun Young Lee, et al. 2023. “Selective Area Epitaxy of Complex Oxide Heterostructures on Si by Oxide Hard Mask Lift-Off.” Electronic Materials Letters 19 (2): 192–99. doi:10.1007/s13391-022-00386-0.