Numerical simulation of tandem solar cells based-CIGS and C-Si sub-cells using SCAPS-1D.

Numerical simulation of single junction and tandem solar cells-based copper indium gallium diselenide Cu(In,Ga)Se₂ and silicon (c-Si) electrical characteristics have been accomplished by Solar Cell Capacitance Simulator (SCAPS 1-D) tool. The layered structure consisting of CIGS as top cell with a buffer layer of zinc-based oxysulfide Zn(O,S) and the bottom cell of c-Si junction has been investigated. The top and bottom single cells have demonstrated the conversion efficiency as 11.63 and 13.16%, respectively. The tandem designs exhibited a conversion efficiency of 25.68% resulted from the enhanced open-circuit voltage (V_OC) as 0.90 V and short-circuit current density (J_SC) as 36.99 mA/cm². The cells were illuminated via AM 1.5 to investigate the current densities and external quantum efficiency (EQE). The simulations were optimized by adjusting the CIGS concentration and the thickness of semiconducting layers. Moreover, the effect of variation in temperature on the device performance has been investigated. [ABSTRACT FROM AUTHOR]