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Quantum Spin Hall States in 2D Monolayer WTe2/MoTe2 Lateral Heterojunctions for Topological Quantum Computation.
- Source :
- ACS Applied Nano Materials; 2/10/2023, Vol. 6 Issue 3, p2020-2026, 7p
- Publication Year :
- 2023
-
Abstract
- The quantum spin Hall (QSH) states in two-dimensional topological insulators (2DTIs) are expected to be applied to future topological quantum computation. We investigate the two-dimensional (2D) lateral heterojunctions of the monolayer 1T′–WTe<subscript>2</subscript> as a 2DTI and the monolayer 2H–MoTe<subscript>2</subscript> as a topologically trivial insulator using density functional theory. This 2D material is expected to have QSH states at each periodically arranged junction as well as properties distinct from the individual properties of each constituent material. At heterojunctions perpendicular to the dimer chains of W atoms in 1T′–WTe<subscript>2</subscript> (in the y direction), two pairs of helical (QSH) states, one at each junction, connect the valence and conduction bands. The strain induced by the large lattice mismatch of the two materials in the y direction widens the bandgap of the 1T′–WTe<subscript>2</subscript> monolayer as a QSH insulator. In the case of the heterojunctions in the x direction, the difference in atomic structure between the two junctions due to low symmetry creates an energy difference between two helical states and a potential gradient in the wide-bandgap 2H–MoTe<subscript>2</subscript> region, resulting in various junction-localized bands. The widening bandgap of the heterojunctions in the y direction is essential for electronic applications of the QSH states, suggesting that this 2D material, namely, 2D WTe<subscript>2</subscript>/MoTe<subscript>2</subscript> heterojunctions, can be a promising candidate for integrating Majorana qubits for future topological quantum computation. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 25740970
- Volume :
- 6
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- ACS Applied Nano Materials
- Publication Type :
- Academic Journal
- Accession number :
- 161844599
- Full Text :
- https://doi.org/10.1021/acsanm.2c05027