Capacitive NO 2 Detection Using CVD Graphene-Based Device.

A graphene-based capacitive NO₂ sensing device was developed by utilizing the quantum capacitance effect. We have used a graphene field-effect transistor (G-FET) device whose geometrical capacitance is enhanced by incorporating an aluminum back-gate electrode with a naturally oxidized aluminum surface as an insulating layer. When the graphene, the top-side of the device, is exposed to NO₂, the quantum capacitance of graphene and, thus, the measured capacitance of the device, changed in accordance with NO₂ concentrations ranging from 1–100 parts per million (ppm). The operational principle of the proposed system is also explained with the changes in gate voltage-dependent capacitance of the G-FET exposed to various concentrations of NO₂. Further analyses regarding carrier density changes and potential variances under various concentrations of NO₂ are also presented to strengthen the argument. The results demonstrate the feasibility of capacitive NO₂ sensing using graphene and the operational principle of capacitive NO₂ sensing. [ABSTRACT FROM AUTHOR]