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Selective substitution induced anomalous phonon stiffening within quasi-one-dimensional P—P chains in SiP2.

Authors :
Dai, Xueting
Qin, Feng
Qiu, Caiyu
Zhou, Ling
Huang, Junwei
Cheng, Fanghua
Bi, Xiangyu
Zhang, Caorong
Li, Zeya
Tang, Ming
Wu, Shengqiang
Zhao, Xiaoxu
Lu, Yangfan
Gou, Huiyang
Yuan, Hongtao
Source :
Nano Research; Jan2023, Vol. 16 Issue 1, p1107-1114, 8p
Publication Year :
2023

Abstract

Light-matter interactions in low-dimensional quantum-confined structures can dominate the optical properties of the materials and lead to optoelectronic applications. In anisotropic layered silicon diphosphide (SiP<subscript>2</subscript>) crystal, the embedded quasi-one-dimensional (1D) phosphorus-phosphorus (P—P) chains directly result in an unconventional quasi-1D excitonic state, and a special phonon mode vibrating along the P—P chains, establishing a unique 1D quantum-confined system. Alloying SiP<subscript>2</subscript> with the homologous element serves as an effective way to study the properties of these excitons and phonons associated with the quasi-1D P—P chains, as well as the strong interaction between these quasiparticles. However, the experimental observation and the related optical spectral understanding of SiP<subscript>2</subscript> with isoelectronic dopants remain elusive. Herein, with the photoluminescence and Raman spectroscopy measurements, we demonstrate the redshift of the confined excitonic peak and the stiffening of the phonon vibration mode B<subscript>1g</subscript><superscript>3</superscript> of a series of Si(P<subscript>1−x</subscript>As<subscript>x</subscript>)<subscript>2</subscript> alloys with increasing arsenic (As) compositions. This anomalous stiffening of is attributed to the selective substitution of As atoms for P atoms within the P—P chains, which is confirmed via our scanning transmission electron microscopy investigation. Such optical spectra evolutions with selective substitution pave a new way to understand the 1D quantum confinement in semiconductors, offering opportunities to explore quasi-1D characteristics in SiP<subscript>2</subscript> and the resulting photonic device application. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
19980124
Volume :
16
Issue :
1
Database :
Complementary Index
Journal :
Nano Research
Publication Type :
Academic Journal
Accession number :
161304642
Full Text :
https://doi.org/10.1007/s12274-022-4703-x