Doping-less TFET Based Common Source Amplifier Implementation and Behaviour Analysis Under Symmetric and Asymmetric Conditions.

In this paper a detailed investigation is carried out upon doping less tunnel field effect transistor (DLTFET) under symmetric and asymmetric conditions. For this purpose, a range for back gate metal work function (ɸ_BG) from 4.1 eV to 4.8 eV and the back gate oxide thickness (t_ox) from 3 to 6 nm have been considered by keeping the front gate work function (ɸ_FG) fixed with 4.5 eV and EOT (Equivalent oxide thickness) of 0.8 nm respectively. Analysis with respect to analog parameters such as transconductance (g_m), total gate capacitance (C_gg) and cut-off frequency (f_T) has been made and compared with the range of symmetric and asymmetric conditions. It is observed from simulation results that the DLTFET has an optimum performance at ɸ_BG of 4.5 eV and t_ox of 0.8 nm EOT. Later the device is then utilised to implement common source amplifier circuit. A range of variations with respect to load resistor (R_L) and drain resistor (R_D) were made to check for the circuit's performance at gain's perspective. [ABSTRACT FROM AUTHOR]