High-Performance Memristors Based on Bi2Te3.

The increasing demand for electronic devices in the environmental and medical fields has attracted considerable attention regarding their fabrication. As a new type of passive nanoelectronic information device, memristors have been widely used in the fields of information storage, logic operation, and neural networks due to their special electrical properties. However, the selection of new materials, the device fabrication methods, and the improvement of memory performance need further research. In this work, Bi₂Te₃ memristors were prepared by the hydrothermal synthesis of Bi₂Te₃ as a resistive dielectric layer material. The properties of the sample were analyzed using SEM, XRD, and XPS characterization methods. The Bi₂Te₃ memristors were also tested for their performance and stability using an electrochemical workstation, and the results showed that the Bi₂Te₃ memristors had good performance. Further analysis of the memristive mechanism showed that the resistive mechanism of Bi₂Te₃ memristors is an interaction of the conducting wire mechanism and the space charge-limited current mechanism. [ABSTRACT FROM AUTHOR]