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Ultrafast Carrier Dynamics in 2D NbTe2 Films: Implications for Photonic and Optoelectronic Devices.

Authors :
Jia, Linnan
Huo, Chang-Fu
Yan, Xiao-Qing
Wu, Jiayang
Zhang, Yu-Zhe
Yang, Yunyi
Xu, Wenxiong
Cui, Qiannan
Song, Daohong
Jia, Baohua
Liu, Zhi-Bo
Chen, Zhigang
Moss, David J.
Source :
ACS Applied Nano Materials; 12/23/2022, Vol. 5 Issue 12, p17348-17355, 8p
Publication Year :
2022

Abstract

As one of the representatives of emerging metallic transition-metal dichalcogenides, niobium ditelluride (NbTe<subscript>2</subscript>) has attracted intensive interest recently due to its distorted lattice structure and unique physical properties. Here, we report on the ultrafast carrier dynamics in NbTe<subscript>2</subscript> measured using time-resolved pump–probe transient reflection spectroscopy. A thickness-dependent carrier relaxation time is observed, exhibiting a clear increase in the fast and slow carrier decay rates for thin NbTe<subscript>2</subscript> flakes. In addition, pump-power-dependent measurements indicate that the carrier relaxation rates are power-independent and the peak amplitude of the transient reflectivity increases linearly with the pump power. The isotropic relaxation dynamics in NbTe<subscript>2</subscript> is also verified by performing polarization-resolved pump–probe measurements. These results provide insight into the light–matter interactions and charge-carrier dynamics in NbTe<subscript>2</subscript> and will pave the way for its applications to photonic and optoelectronic devices. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
25740970
Volume :
5
Issue :
12
Database :
Complementary Index
Journal :
ACS Applied Nano Materials
Publication Type :
Academic Journal
Accession number :
161009567
Full Text :
https://doi.org/10.1021/acsanm.2c04333