HfO x /Ge RRAM with High ON/OFF Ratio and Good Endurance.

MLA

Wei, Na, et al. “HfO x /Ge RRAM with High ON/OFF Ratio and Good Endurance.” Electronics (2079-9292), vol. 11, no. 22, Nov. 2022, p. 3820. EBSCOhost, https://doi.org/10.3390/electronics11223820.

APA

Wei, N., Ding, X., Gao, S., Wu, W., & Zhao, Y. (2022). HfO x /Ge RRAM with High ON/OFF Ratio and Good Endurance. Electronics (2079-9292), 11(22), 3820. https://doi.org/10.3390/electronics11223820

Chicago

Wei, Na, Xiang Ding, Shifan Gao, Wenhao Wu, and Yi Zhao. 2022. “HfO x /Ge RRAM with High ON/OFF Ratio and Good Endurance.” Electronics (2079-9292) 11 (22): 3820. doi:10.3390/electronics11223820.