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Research on Ba2Ti9O20-filled polybutadiene composites with near-zero temperature coefficient of dielectric constant by SiO2 addition.
- Source :
- Journal of Materials Science: Materials in Electronics; Nov2022, Vol. 33 Issue 33, p25463-25474, 12p
- Publication Year :
- 2022
-
Abstract
- A study on Ba<subscript>2</subscript>Ti<subscript>9</subscript>O<subscript>20</subscript> and SiO<subscript>2</subscript> ceramic powder-filled polybutadiene (PB) composite substrates was conducted in this paper. The total content of ceramic fillers was a fixed value of 85 wt.% and the SiO<subscript>2</subscript> content varied from 5 to 25 wt.%. The analyses of FTIR, XPS, TEM, Contact Angle testing, and SEM were performed to study the surface characteristics of Vinyltrimethoxysilane (A171)-modified Ba<subscript>2</subscript>Ti<subscript>9</subscript>O<subscript>20</subscript>. The microstructure of composite substrates displayed that Ba<subscript>2</subscript>Ti<subscript>9</subscript>O<subscript>20</subscript> and SiO<subscript>2</subscript> ceramic fillers distributed in PB homogeneously with a small amount of SiO<subscript>2</subscript> addition. However, SiO<subscript>2</subscript> filler particles agglomerated and poorly dispersed in composites with 25 wt.% SiO<subscript>2</subscript> loading. Furthermore, the effects of SiO<subscript>2</subscript> filler loading on density, porosity, dielectric properties, and mechanical properties of composites were investigated in detail. Last, the composites exhibited medium dielectric constant (ε r = 7.32) , low dielectric loss (tan δ = 0.002), near-zero temperature coefficient of dielectric constant ( τ ε = - 8.07 ppm / ∘ C ) at a high frequency of 10 GHz, relatively low porosity (1.36%), and acceptable bending strength (75.26 MPa) at 65 wt.% Ba<subscript>2</subscript>Ti<subscript>9</subscript>O<subscript>20</subscript> and 20 wt.% SiO<subscript>2</subscript> fillers loading. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09574522
- Volume :
- 33
- Issue :
- 33
- Database :
- Complementary Index
- Journal :
- Journal of Materials Science: Materials in Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 160308606
- Full Text :
- https://doi.org/10.1007/s10854-022-09250-1