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Reconfigurable RFICs in Si-Based Technologies for a Compact Intelligent RF Front-End.

Authors :
Mukhopadhyay, Rajarshi
Yunseo Park
Padmanava Sen
Srirattana, Nuttapong
Jongsoo Lee
Cháng-ho Lee
Nuttinek, Sebastien
Joseph, Alvin
Cressler, John D.
Laskar, Joy
Source :
IEEE Transactions on Microwave Theory & Techniques; Jan2005, Vol. 53 Issue 1, p81-93, 13p
Publication Year :
2005

Abstract

This paper presents reconfigurable RF integrated circuits (ICs) for a compact implementation of an intelligent RF front-end for multiband and multistandard applications. Reconfigurability has been addressed at each level starting from the basic elements to the RF blocks and the overall front-end architecture. An active resistor tunable from 400 to 1600Ω up to 10 GHz has been designed and an equivalent model has been extracted. A fully tunable active inductor using a tunable feedback resistor has been proposed that provides inductances between 0.1-15 nH with Q > 50 in the C-band. To demonstrate reconfigurability at the block level, voltage-controlled oscillators with very wide tuning ranges have been implemented in the C-band using the proposed active inductor, as well as using a switched-spiral resonator with capacitive tuning. The ICs have been implemented using 0.18-μm Si-CMOS and 0.18-μm SiGe-BiCMOS technologies. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189480
Volume :
53
Issue :
1
Database :
Complementary Index
Journal :
IEEE Transactions on Microwave Theory & Techniques
Publication Type :
Academic Journal
Accession number :
16014223
Full Text :
https://doi.org/10.1109/TMTT.2004.839352