Controlled Electroplating of Noble Metals on III-V Semiconductor Nanotemplates Fabricated by Anodic Etching of Bulk Substrates.

Porous templates are widely used for the preparation of various metallic nanostructures. Semiconductor templates have the advantage of controlled electrical conductivity. Site-selective deposition of noble metal formations, such as Pt and Au nanodots and nanotubes, was demonstrated in this paper for porous InP templates prepared by the anodization of InP wafers. Metal deposition was performed by pulsed electroplating. The produced hybrid nanomaterials were characterized by scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). It was shown that uniform deposition of the metal along the pore length could be obtained with optimized pulse parameters. The obtained results are discussed in terms of the optimum conditions for effective electrolyte refreshing and avoiding its depletion in pores during the electroplating process. It was demonstrated that the proposed technology could also be applied for the preparation of metal nanostructures on porous oxide templates, when it is combined with thermal treatment for the oxidation of the porous semiconductor skeleton. [ABSTRACT FROM AUTHOR]