Design and Analysis of Magnetic Tunnel Junction for Spintronic-Based STT-MRAM.

The magnetic tunnel junction is the heart of the STT-MRAM memory. The MTJ is a spintronic device, which is used to store and read the data. With the advancement, most of the work is done online and a useful device is needed in order to store the data. Hence, it is important to design a promising device to store the data for a long time without any damage or loss of information. In this paper, first, we use the MTJ LAB simulator to check the important parameters such as TMR, resistance, and STT components and check how these parameters change for different oxide thicknesses. After this, the device was hybrid with the CMOS for 1-bit STT-MRAM and the results were drawn. So, in this paper, the main focus is to select appropriate oxide thickness and t ox = 0. 8 5 nm is used to get better TMR ratio, resistance, and STT-components. [ABSTRACT FROM AUTHOR]