Cite
P‐1.11: High‐mobility ZnO thin‐film transistors with HfO2/Al2O3 bilayer dielectric.
MLA
Li, Qi, et al. “P‐1.11: High‐mobility ZnO Thin‐film Transistors with HfO2/Al2O3 Bilayer Dielectric.” SID Symposium Digest of Technical Papers, vol. 53, Oct. 2022, pp. 603–05. EBSCOhost, https://doi.org/10.1002/sdtp.16037.
APA
Li, Q., Dong, J., Wang, J., Xu, D., Han, D., & Wang, Y. (2022). P‐1.11: High‐mobility ZnO thin‐film transistors with HfO2/Al2O3 bilayer dielectric. SID Symposium Digest of Technical Papers, 53, 603–605. https://doi.org/10.1002/sdtp.16037
Chicago
Li, Qi, Junchen Dong, Jingyi Wang, Dengqin Xu, Dedong Han, and Yi Wang. 2022. “P‐1.11: High‐mobility ZnO Thin‐film Transistors with HfO2/Al2O3 Bilayer Dielectric.” SID Symposium Digest of Technical Papers 53 (October): 603–5. doi:10.1002/sdtp.16037.