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Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiN x as a Gate Dielectric.
- Source :
- Micromachines; Sep2022, Vol. 13 Issue 9, p1396-N.PAG, 9p
- Publication Year :
- 2022
-
Abstract
- In this paper, SiNx film deposited by plasma-enhanced chemical vapor deposition was employed as a gate dielectric of AlGaN/GaN high electron mobility transistors (HEMTs). We found that the NH<subscript>3</subscript> flow during the deposition of SiNx can significantly affect the performances of metal–insulator–semiconductor (MIS) HEMTs. Compared to that without using NH<subscript>3</subscript> flow, the device with the optimized NH<subscript>3</subscript> flow exhibited three orders of magnitude lower gate leakage current, two orders of magnitude higher ON/OF drain current ratio, and an increased breakdown field by 69%. In addition, an in situ N<subscript>2</subscript> plasma surface treatment prepared prior to SiNx deposition can further improve DC performances of MIS-HEMTs to a very low gate leakage current of 10<superscript>−9</superscript> mA/mm and a high ON/OFF drain current ratio up to 10<superscript>9</superscript> by reducing the interface state density. These results demonstrate the great potential for using PECVD-SiNx as a gate dielectric in GaN-based MIS-HEMTs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 2072666X
- Volume :
- 13
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Micromachines
- Publication Type :
- Academic Journal
- Accession number :
- 159358122
- Full Text :
- https://doi.org/10.3390/mi13091396