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Influence of FK209 Cobalt Doped Electron Transport Layer in Cesium Based Perovskite Solar Cells.

Authors :
Hayali, Ahmed
Reeves, Roger J.
Alkaisi, Maan M.
Source :
Applied Sciences (2076-3417); Sep2022, Vol. 12 Issue 18, p9382-9382, 19p
Publication Year :
2022

Abstract

The efficiency and stability of perovskite solar cells (PSCs) depend not only on the perovskite film quality, but they are also influenced by the charge carriers of both the electron and hole transport layers (ETL and HTL). Doping of the carrier transport layers is considered one of effective technique applied to enhance the efficiency and performance of the PSCs. FK209 cobalt TFSI and lithium TFSI salt were investigated as dopants for mesoporous TiO<subscript>2</subscript> (M-TiO<subscript>2</subscript>) in the ETL. Herein, FK209 cobalt doping offers improved conductivity, reproducibility and stability compared to other doping or undoped M-TiO<subscript>2</subscript> control device. It has been found that an optimum concentration of 2.5 mg FK209 cobalt in the M-TiO<subscript>2</subscript> has resulted in an efficiency of 15.6% on 0.36 cm<superscript>2</superscript> active device area, whereas, the undoped M-TiO<subscript>2</subscript> yielded an average efficiency of 10.8%. The enhanced efficiency is due to the improved conductivity of the ETL while maintaining high transparency and low surface roughness with FK209 doping. The M-TiO<subscript>2</subscript> doped with FK209 has a transparency of the 90% over the visible range and its measured energy gap was 3.59 eV. Perovskite films deposited on the M-TiO<subscript>2</subscript> doped with FK209 has also a lower PL intensity indicating faster charge extraction. The measured lifetime of the perovskite films deposited on the optimised M-TiO<subscript>2</subscript> film was 115.8 ns. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
20763417
Volume :
12
Issue :
18
Database :
Complementary Index
Journal :
Applied Sciences (2076-3417)
Publication Type :
Academic Journal
Accession number :
159275764
Full Text :
https://doi.org/10.3390/app12189382