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High Voltage Normally-Off p-GaN Gate HEMT with the Compatible High Threshold and Drain Current.
- Source :
- ECS Journal of Solid State Science & Technology; Aug2022, Vol. 11 Issue 8, p370-373, 4p
- Publication Year :
- 2022
Details
- Language :
- English
- ISSN :
- 21628769
- Volume :
- 11
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- ECS Journal of Solid State Science & Technology
- Publication Type :
- Academic Journal
- Accession number :
- 159228115
- Full Text :
- https://doi.org/10.1149/2162-8777/ac8a71