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Improvement of Ion, Electric Field and Transconductance of TriGate FinFET by 5nm Technology.

Authors :
P., Vijaya
Rohit, Lorenzo
Source :
SILICON (1876990X); Aug2022, Vol. 14 Issue 13, p7889-7900, 12p
Publication Year :
2022

Abstract

In present days, the improved performance in nanoscale dimensions is of enormous need than conventional CMOS devices. This paper presents an insight into Trigate FinFET in 5 nm technology using ATLAS 2D simulator. The drain current model based on surface potential calculation is shown to study the performance of tri gate FinFET. The 2D Poisson's equation is solved for both the gates of tri gate FinFET which results in effects of gate voltage in performance parameters. Different high-K dielectric materials are used in the proposed device and corresponding parameters are calculated to study its behavior in drain current characteristics, electrical parameters, and analog parameters. The On current is increased by 150 % then the existing architectures. The net electric field is increased by a factor of 2. There is a significant increase in Transconductance of the device. The simulated models are verified using Silvaco TCAD in ATLAS simulator. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
1876990X
Volume :
14
Issue :
13
Database :
Complementary Index
Journal :
SILICON (1876990X)
Publication Type :
Academic Journal
Accession number :
159160378
Full Text :
https://doi.org/10.1007/s12633-021-01536-z