β-Ga2O3 Junctionless FET with an Ω Shape 4H-SiC Region in Accumulation Mode.

In this paper, we present a solution for understanding volume depletion and essentially decreasing the leakage current of β-Ga₂O₃ junctionless FETs (βJL-FETs) by embedding the 4H-SiC layer into the BOX layer (βESJL-FET). Using the silvaco simulator with 2-D simulations, we illustrate that the βESJL-FET with an embedded 4H-SiC layer shows a very high I_ON/I_OFF ratio of ~10¹² even for a 40 nm channel length. The main idea of this work focuses on changing the volume depletion for achieving a lower leakage current. Also, the other goal is obtaining the lower self-heating effect provided by replacing 4H-SiC with a higher thermal conductivity into the BOX layer. Although the silicon FETs are more applicable but, due to better performance at the ultra-scaled dimensions, we propose the β-Ga₂O₃ instead of silicon. Ga₂O₃ has a higher effective mass and lower bond distance than silicon and is suitable for short-channel devices. [ABSTRACT FROM AUTHOR]