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Texture Investigation of Copper Interconnects with a Different Line Width.
- Source :
- Journal of Electronic Materials; Jan2005, Vol. 34 Issue 1, p53-61, 9p, 10 Diagrams, 2 Charts, 3 Graphs
- Publication Year :
- 2005
-
Abstract
- To understand the effect of line width on textural and microstructural evolution of Cu damascene interconnect, three Cu interconnects samples with different line widths are investigated. According to x-ray diffraction (XRD) results, the (111) texture is developed in all investigated lines. Scattered {111}<112> and {111}<110> texture components are present in 0.18-µm-width interconnect lines, and the {111}<110> texture was developed in 2-µm-width interconnect lines. The directional changes of the (111) plane orientation with increased line width were investigated by XRD. In addition, microstructure and grain-boundary character distribution (GBCD) of Cu interconnect were measured using electron backscattered diffraction (EBSD) techniques. This measurement demonstrated that a bamboo-like microstructure is developed in the narrow line, and a polygranular structure is developed in the wider line. The fraction of ∑3 boundaries is increased as the line width increases but is decreased in the blanket film. A new interpretation of textural evolution in damascene interconnect lines aider annealing is suggested, based on the state of stress and growth mechanisms of Cu deposits. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03615235
- Volume :
- 34
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Journal of Electronic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 15915388
- Full Text :
- https://doi.org/10.1007/s11664-005-0180-8