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Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by metal–organic vapor phase epitaxy.
- Source :
- Applied Physics Letters; 8/22/2022, Vol. 121 Issue 8, p1-5, 5p
- Publication Year :
- 2022
-
Abstract
- We studied indium incorporation into InGaN/GaN quantum wells grown by metal–organic vapor phase epitaxy by systematically varying of gallium and indium precursor flows on (0001), (10 1 ¯ 3), (11 2 ¯ 2), and (10 1 ¯ 0) orientations. The layer thickness and indium composition obtained from x-ray diffraction analysis were correlated with a model based on indium and gallium incorporation efficiencies. In the model, the indium incorporation efficiency is reproduced by the Langmuir surface coverage of gallium, indicating that indium atoms close to gallium atoms can be incorporated preferably. [ABSTRACT FROM AUTHOR]
- Subjects :
- INDIUM
EPITAXY
INDIUM gallium nitride
GALLIUM
GASES
VAPORS
QUANTUM wells
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 121
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 158742305
- Full Text :
- https://doi.org/10.1063/5.0088908