Defect engineered blue photoluminescence in ZnO:Al/TiO2 heterostructures.

Tailoring the blue photoluminescence (PL) in Al-doped ZnO (AZO)/TiO₂ heterostructures is demonstrated by a controlled induction of shallow defect centers by 50 keV Ar⁺-ions. This is established by a combination of temperature dependent PL and electron paramagnetic resonance spectroscopy. The dominant blue-violet PL in an as-grown sample comprises a near band-edge emission, along with a peak associated with a radiative recombination of the electrons in shallow donor levels (Zn interstitials) and the holes from the valence band. However, the evolution of an additional yellow-green PL band at a fluence of 1 × 10¹⁵ ions/cm² is governed by deep donor levels, particularly ionized oxygen vacancies. Irradiation at 1 × 10¹⁶ ions/cm² further leads to the formation of Zn vacancies (shallow acceptors) owing to the development of an O-rich surface. The structural modifications of these samples have been investigated by field-emission scanning electron microscopy , transmission electron microscopy, and Rutherford backscattering. While small micro-cracks are found at a fluence of 2 × 10¹⁶ ions/cm², the formation of graded layers is obtained at the highest fluence of 5 × 10¹⁶ ions/cm² owing to ballistic intermixing and diffusion of the constituents. Detailed investigation suggests that a significant amount of Ti atoms is diffused in AZO by a complete deterioration of the AZO/TiO₂ matrix at the highest fluence. [ABSTRACT FROM AUTHOR]