Wake-up effect in Hf0.4Zr0.6O2 ferroelectric thin-film capacitors under a cycling electric field.

MLA

Li, Yilin, et al. “Wake-up Effect in Hf0.4Zr0.6O2 Ferroelectric Thin-Film Capacitors under a Cycling Electric Field.” Chinese Physics B, vol. 31, no. 8, Aug. 2022, pp. 1–5. EBSCOhost, https://doi.org/10.1088/1674-1056/ac5977.

APA

Li, Y., Zhu, H., Li, R., Liu, J., Xiang, J., Xie, N., Huang, Z., Fang, Z., Liu, X., & Zhou, L. (2022). Wake-up effect in Hf0.4Zr0.6O2 ferroelectric thin-film capacitors under a cycling electric field. Chinese Physics B, 31(8), 1–5. https://doi.org/10.1088/1674-1056/ac5977

Chicago

Li, Yilin, Hui Zhu, Rui Li, Jie Liu, Jinjuan Xiang, Na Xie, Zeng Huang, Zhixuan Fang, Xing Liu, and Lixing Zhou. 2022. “Wake-up Effect in Hf0.4Zr0.6O2 Ferroelectric Thin-Film Capacitors under a Cycling Electric Field.” Chinese Physics B 31 (8): 1–5. doi:10.1088/1674-1056/ac5977.