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Realization of unpinned two-dimensional dirac states in antimony atomic layers.

Authors :
Lu, Qiangsheng
Cook, Jacob
Zhang, Xiaoqian
Chen, Kyle Y.
Snyder, Matthew
Nguyen, Duy Tung
Reddy, P. V. Sreenivasa
Qin, Bingchao
Zhan, Shaoping
Zhao, Li-Dong
Kowalczyk, Pawel J.
Brown, Simon A.
Chiang, Tai-Chang
Yang, Shengyuan A.
Chang, Tay-Rong
Bian, Guang
Source :
Nature Communications; 8/6/2022, Vol. 13 Issue 1, p1-8, 8p
Publication Year :
2022

Abstract

Two-dimensional (2D) Dirac states with linear dispersion have been observed in graphene and on the surface of topological insulators. 2D Dirac states discovered so far are exclusively pinned at high-symmetry points of the Brillouin zone, for example, surface Dirac states at Γ ¯ in topological insulators Bi<subscript>2</subscript>Se(Te)<subscript>3</subscript> and Dirac cones at K and K ′ points in graphene. The low-energy dispersion of those Dirac states are isotropic due to the constraints of crystal symmetries. In this work, we report the observation of novel 2D Dirac states in antimony atomic layers with phosphorene structure. The Dirac states in the antimony films are located at generic momentum points. This unpinned nature enables versatile ways such as lattice strains to control the locations of the Dirac points in momentum space. In addition, dispersions around the unpinned Dirac points are highly anisotropic due to the reduced symmetry of generic momentum points. The exotic properties of unpinned Dirac states make antimony atomic layers a new type of 2D Dirac semimetals that are distinct from graphene. In graphene and on the surfaces of many topological insulators, the Dirac cones are pinned to high symmetry points in reciprocal space. Here, the authors report that the Dirac cones in atomically-thin Sb layers occur at generic reciprocal-space points which can be tuned by lattice strain. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
20411723
Volume :
13
Issue :
1
Database :
Complementary Index
Journal :
Nature Communications
Publication Type :
Academic Journal
Accession number :
158382678
Full Text :
https://doi.org/10.1038/s41467-022-32327-8