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Structural, optical, magnetic, and photoluminescence properties of Sn0.7−xMo0.3 NdxO2+δ (0.0 ≤ x ≤ 0.3).
- Source :
- Journal of Materials Science: Materials in Electronics; May2022, Vol. 33 Issue 15, p11958-11969, 12p
- Publication Year :
- 2022
-
Abstract
- In this study, the properties of a series of (Sn<subscript>0.7−x</subscript>Mo<subscript>0.3</subscript> Nd<subscript>x</subscript>O<subscript>2+δ</subscript>) (0.0 ≤ x ≤ 0.3) Nd<superscript>3+</superscript> thin films prepared by sol–gel/spin coating technique were examined. The XRD analysis revealed the formation of all thin films in the form of Cassiterite structure. According to the FTIR investigation, when Nd<superscript>3+</superscript> was substituted for Sn<superscript>4+</superscript> ions in the crystal lattice, the absorption peaks migrated to the lower wavenumber side. This could be related to variations in bond length that occurs when Sn<superscript>4+</superscript> ions in the crystal lattice are replaced with lighter Nd<superscript>3+</superscript> ions. The morphology of the films was examined by using scanning electron microscope (SEM). In terms of Nd content, optical properties such as optical band gap, refractive index (n), and extinction coefficient (k) were investigated. The magnetic characteristics indicated diamagnetic behavior of Sn<subscript>0.7</subscript>Mo<subscript>0.3</subscript>O<subscript>2+δ</subscript>, paramagnetic behavior of Sn<subscript>0.6</subscript>Nd<subscript>0.1</subscript>Mo<subscript>0.3</subscript>O<subscript>2+δ</subscript>, and ferromagnetic behavior of samples with a high concentration of Nd, (Sn<subscript>0.5</subscript>Nd<subscript>0.2</subscript>Mo<subscript>0.3</subscript>O<subscript>2+δ</subscript>, Sn<subscript>0.4</subscript>Nd<subscript>0.3</subscript>Mo<subscript>0.3</subscript>O<subscript>2+δ</subscript>). The presence of active Nd<superscript>3+</superscript> successfully introduced into the Sn:Mo host matrix is confirmed by the excitation dependent (PL) observed in the 350–700 nm range. PL measurements reveal two large bands located at 425 and 466 nm. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09574522
- Volume :
- 33
- Issue :
- 15
- Database :
- Complementary Index
- Journal :
- Journal of Materials Science: Materials in Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 158366480
- Full Text :
- https://doi.org/10.1007/s10854-022-08158-0