Tunable Volatile to Non‐Volatile Resistive Switching in PbZrO3 Antiferroelectric Thin Film for Neuromorphic Computing.

MLA

Lv, Zonglin, et al. “Tunable Volatile to Non‐Volatile Resistive Switching in PbZrO3 Antiferroelectric Thin Film for Neuromorphic Computing.” Advanced Materials Interfaces, vol. 9, no. 21, July 2022, pp. 1–10. EBSCOhost, https://doi.org/10.1002/admi.202201005.

APA

Lv, Z., Wang, H., Cao, J., Zhang, C., Zhao, G., Yu, R., Zhang, B., Xu, X., Jiang, Y., & Miao, J. (2022). Tunable Volatile to Non‐Volatile Resistive Switching in PbZrO3 Antiferroelectric Thin Film for Neuromorphic Computing. Advanced Materials Interfaces, 9(21), 1–10. https://doi.org/10.1002/admi.202201005

Chicago

Lv, Zonglin, Hongwei Wang, Jinpeng Cao, Chao Zhang, Gaolei Zhao, Richeng Yu, Bo Zhang, Xiaoguang Xu, Yong Jiang, and Jun Miao. 2022. “Tunable Volatile to Non‐Volatile Resistive Switching in PbZrO3 Antiferroelectric Thin Film for Neuromorphic Computing.” Advanced Materials Interfaces 9 (21): 1–10. doi:10.1002/admi.202201005.